unisonic technologies co., ltd 7n60a power mosfet www.unisonic.com.tw 1 of 7 copyright ? 2011 unisonic technologies co., ltd vqw-r502-111,f 7 a , 600v n-channel power mosfet ? description the utc 7n60a is a high voltage n-channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. this power mosfet is well suited for high efficiency switch mode power supply. ? features * r ds(on) = 1.2 ? @v gs = 10 v * ultra low gate charge (typical 28 nc ) * low reverse transfer capacitance (c rss = typical 12 pf ) * fast switching capability * avalanche energy tested * improved dv/dt capability, high ruggedness ? symbol 1.gate 3.source 2.drain ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 7N60AL-TA3-T 7n60ag-ta3-t to-220 g d s tube 7n60al-tf1-t 7n60ag-tf1-t to-220f1 g d s tube 7n60al-tf3-t 7n60ag-tf3-t to-220f g d s tube note: pin assignment: g: gate d: drain s: source 7N60AL-TA3-T (1)packing type (2)package type (3)lead free (1) t: tube (2) ta3: to-220, tf1: to220-f1, tf3: to-220f (3) g: halogen free, l: lead free
7n60a power mosfet unisonic technologies co., ltd 2 of 7 www.unisonic.com.tw vqw-r502-111,f ? absolute maximum ratings ( t c = 25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 600 v gate-source voltage v gss 30 v avalanche current (note 2) i ar 7 a continuous drain current i d 7 a pulsed drain current (note 2) i dm 28 a avalanche energy single pulsed (note 3) e as 330 mj repetitive (note 2) e ar 7.5 mj power dissipation to-220 p d 65 w to-220f/to-220f1 30 junction temperature t j +150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating : pulse width limited by t j ( max ) 3. l = 12.05mh, i as = 7.4a, v dd =50v, r g = 27 ? , starting t j = 25c ? thermal data parameter symbol ratings unit junction to ambient to-220 ja 83.3 c/w to-220f/to-220f1 62.5 junction to case to-220 jc 1.92 c/w to-220f/to-220f1 4.16
7n60a power mosfet unisonic technologies co., ltd 3 of 7 www.unisonic.com.tw vqw-r502-111,f ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0v, i d = 250 a 600 v drain-source leakage current i dss v ds = 600v, v gs = 0v 10 a gate-source leakage current forward i gss v gs = 30 v, v ds = 0 v 100 na reverse v gs = -30 v, v ds = 0 v -100 na on characteristics gate threshold voltage v gs ( th ) v ds = v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds ( on ) v gs = 10v, i d = 3.5a (note 4) 0.93 1.2 ? dynamic characteristics input capacitance c iss v ds =25v, v gs =0v, f=1.0 mhz 950 1430 pf output capacitance c oss 85 130 pf reverse transfer capacitance c rss 12 18 pf switching characteristics turn-on delay time t d ( on ) v dd =300v, i d =7a, r g =25 ? (note 1, 2) 16 ns turn-on rise time t r 60 ns turn-off delay time t d ( off ) 80 ns turn-off fall time t f 65 ns total gate charge q g v ds =300v, i d =7a, v gs =10 v (note 1, 2) 28 42 nc gate-source charge q gs 5.5 8.3 nc gate-drain charge q gd 11 17 nc drain-source diode characteristics and maximum ratings drain-source diode forward voltage v sd v gs = 0v, i s = 7a 1.4 v maximum continuous drain-source diode forward current i s 7 a maximum pulsed drain-source diode forward current i sm 28 a reverse recovery time t r r v gs = 0v, i s = 7a, di f / dt = 100a/ s (note 1) 365 ns reverse recovery charge q rr 4.23 c notes: 1. pulse test: pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature
7n60a power mosfet unisonic technologies co., ltd 4 of 7 www.unisonic.com.tw vqw-r502-111,f ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms
7n60a power mosfet unisonic technologies co., ltd 5 of 7 www.unisonic.com.tw vqw-r502-111,f ? test circuits and waveforms (cont.) v gs d.u.t. r g 10v v ds r l v dd pulse width 1 s duty factor 0.1% v ds 90% 10% v gs t d(on) t r t d(off) t f switching test circuit switching waveforms 50k ? 0.3 f dut v ds same type as d.u.t. 0.2 f 12v v gs 1ma 10v charge q gs q gd q g v gs gate charge test circuit gate charge waveform v dd t p time bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit unclamped inductive switching waveforms
7n60a power mosfet unisonic technologies co., ltd 6 of 7 www.unisonic.com.tw vqw-r502-111,f ? typical characteristics drain current, i d (a) drain current, i d (a) 0 2.0 0.8 drain current, i d (a) on resistance, r ds(on) ( ? ) on resistance vs. drain current 25 10 51520 0 1.0 1.5 2.5 0.4 source drain voltage, v sd (v) reverse drain current, i s (a) reverse drain current vs. source drain voltage 1.4 0.6 8 10 -1 10 0 10 1 0.8 v gs =20v note: 1. v ds =10v 2. pulse test v gs =10v note: 1. t d =25c 2. pulsed test 1.2 1.0 0.1 1000 10 drain source voltage, v ds (a) capacitance (pf) capacitance vs. drain source voltage 100 1 10 1 100 10000 total gate charge, q g (nc) gate source voltage, v gs (v) gate source voltage vs. total gate charge 35 525 0 5 10 15 30 20 c iss c oss c rss note: 1. v gs : 0v 2. f = 1mhz 3. t c = 25c note: 1. i d = 7a 2. t c = 25 c v dd = 300v v dd = 80v v dd = 200v 10
7n60a power mosfet unisonic technologies co., ltd 7 of 7 www.unisonic.com.tw vqw-r502-111,f ? typical characteristics (cont.) -50 1.1 0.9 junction temperature, t j (c) drain-source voltage, v dss (normalized) drain-source voltage vs. junction temperature 175 0 100 0.8 1.0 1.2 junction temperature, t j (c) on-resistance, r ds(on) (normalized) on-resistance vs. ju nction temperature 175 -50 100 0.0 1.0 2.5 25 150 75 note: 1. v gs = 0v 2. i d = 250a 0 150 125 75 50 25 -25 0.5 1.5 2.0 3.0 125 50 -25 note: 1. v gs = 10v 2. i d = 3.5a drain current, i d (a) drain current, i d (a) 1 m s v dss max utc assumes no responsib ility for equipment failures that result from using pr oducts at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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